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NXP Semiconductors /QN908XC /FLASH /SMART_CTRL

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Interpret as SMART_CTRL

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31 2827 2423 2019 1615 1211 87 43 0 0 0 0 0 0 0 0 00 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 (PRGML_EN)PRGML_EN 0 (PRGMH_EN)PRGMH_EN 0 (SMART_WRITEL_EN)SMART_WRITEL_EN 0 (SMART_WRITEH_EN)SMART_WRITEH_EN 0 (SMART_ERASEL_EN)SMART_ERASEL_EN 0 (SMART_ERASEH_EN)SMART_ERASEH_EN 0MAX_WRITE 0MAX_ERASE

Description

smart erase control register

Fields

PRGML_EN

It enable Low 256KB Flash write operation;
PRGMH_EN

It enable High 256KB Flash write operation;
SMART_WRITEL_EN

It enable Low 256KB Flash Smart program flow. When smart write is done, hardware automatically clear it
SMART_WRITEH_EN

It enable High 256KB Flash Smart program flow. When smart write is done, hardware automatically clear it
SMART_ERASEL_EN

It enable Low 256KB Flash Smart erase flow; When smart erase is done, hardware automatically clear it
SMART_ERASEH_EN

It enable High 256KB Flash Smart erase flow; When smart erase is done, hardware automatically clear it
MAX_WRITE

When smart program is used, this is the maximum retry number for one write operation.
MAX_ERASE

When smart erase is used, this is the maximum retry number for one erase operation.

Links

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Register Reference

https://github.com/cmsis-svd/cmsis-svd-data